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Optoelectronics
Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresistDownload：1192次
Sung-Wen Huang Chen 1Yu-Ming Huang 1,2Konthoujam James Singh 1Yu-Chien Hsu 1[ ... ]Hao-Chung Kuo 1,7,*
Author Affiliations
Abstract
1 Department of Photonics & Graduate Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China
2 Institute of Photonic System, Taiwan Chiao Tung University, Tainan 71150, China
3 Saphlux Inc., Branford, Connecticut 06405, USA
4 Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China
5 Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA
6 e-mail: wutingzhu@xmu.edu.cn
7 e-mail: hckuo@faculty.nctu.edu.tw
Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN μ-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar μ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A/cm2 injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar μ-LEDs’ emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020).
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Photonics Research
2020, 8(5): 05000630
Optoelectronics
Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transferDownload：802次
Sung-Wen Huang Chen 1Chih-Chiang Shen 1Tingzhu Wu 2,3Zhen-You Liao 1[ ... ]Hao-Chung Kuo 1,6,7
Author Affiliations
Abstract
1 Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
2 Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China
3 e-mail: wutingzhu@xmu.edu.cn
4 Institute of Photonics System, National Chiao Tung University, Tainan 71150, Taiwan
5 HKUST Fok Ying Tung Research Institute, Nansha District, Guangzhou 511458, China
6 Department of Electrical Engineering and Computer Sciences and TBSI, University of California at Berkeley, Berkeley, California 94720, USA
7 e-mail: hckuo@faculty.nctu.edu.tw
Full-color displays based on micro light-emitting diodes (μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring (NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al2O3 layer was deposited on the sidewall of NR-μLEDs, which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.
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Photonics Research
2019, 7(4): 04000416
Semiconductor UV Photonics
Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes
Zi-Hui Zhang 1,2Jianquan Kou 1Sung-Wen Huang Chen 3Hua Shao 1[ ... ]Hao-Chung Kuo 3,4,*
Author Affiliations
Abstract
1 Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
2 e-mail: zh.zhang@hebut.edu.cn
3 Department of Photonics and Institute of Electro-Optical Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China
4 Department of Electrical Engineering and Computer Sciences and TBSI, University of California at Berkeley, Berkeley, California 94720, USA
It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced electric field in the p-EBL for [0001] oriented DUV LEDs makes the holes less mobile and thus further decreases the hole injection capability. Fortunately, enhanced hole injection is doable by making holes lose less energy, and this is enabled by a specifically designed p-EBL structure that has a graded AlN composition. The proposed p-EBL can screen the polarization induced electric field in the p-EBL. As a result, holes will lose less energy after going through the proposed p-EBL, which correspondingly leads to the enhanced hole injection. Thus, an external quantum efficiency of 7.6% for the 275 nm DUV LED structure is obtained.
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Photonics Research
2019, 7(4): 040000B1
Review
850/940-nm VCSEL for optical communication and 3D sensing
Chih-Hsien Cheng 1Chih-Chiang Shen 2Hsuan-Yun Kao 1Dan-Hua Hsieh 2[ ... ]Gong-Ru Lin 1,3,*
Author Affiliations
Abstract
1 Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 10617, China
2 Department of Photonics & Graduate Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30100, China
3 Department of Electrical Engineering, National Taiwan University, Taipei 10617, China
This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
vertical cavity surface emitting laser 3D sensing optical communication LiDAR virtual reality augmented reality 
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Opto-Electronic Advances
2018, 1(3): 180005
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